Author(s): Mubarak Hamad Oglah

Abstract: Chemical bath deposition (CBD) has been involved in the preparation of films which are formation from Cadmium Oxide (CdO). Fabricated films were annealed at 300oC with 0.03 M of concentration. The analysis of structure, morphology and optical were obtained in thin films. For characterization of heterojunction CdO/Si, the electrical properties were achieved for photodetector application. In structure analysis, X-ray diffraction (XRD) shows appearance of a phase identical with cubic of CdO film. Atomic force microscopy (AFM) characterised and viewed the shape of topography films. In addition, scanning electronic microscopy (SEM) was shown the material structure on the surface. Moreover, the exhibition of films in optical properties was in maximum values of absorption wavelengths ~ 0.9 in the visible region of the spectrum. For more details, the estimation of band gap energy (Eg) was around 2.70 eV. These results were important and significant influence on the electrical properties of CdO/Si heterojunction. The material considered being a good oxide semiconductor for heterojunction application.

DOI: 10.22271/27078043.2025.v6.i1a.74

Pages: 21-29 | Views: 756 | Downloads: 256

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